100 mm (4”) wafers were introduced in 1975. They became the industry standard until 1981 when 150 mm (6”) wafers first went into production. 100 mm wafers are still widely used today for many applications. 4” wafers are being used to develop SOI (Silicon on Insulator) wafers. They are also used for many optical and MEMS applications. SVM carries many different grades and specifications of 100 mm wafers in our multi-million dollar inventory. Here are a few examples; please contact us with any questions or comments.

Diameter: 100 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: <100> +/- 1°
Growth Method: Cz
Resistivity: 10-30 Ω-cm
Thickness: 500-550 μm
TTV: <10 μm
TIR: <6 μm
Front Surface: Polished
Back Surface: Etched
Particle Count: <10@0.3
Flats: 2 SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 100 +/-0.2 mm
Type/Dopant: P/Boron
Orientation: <100> +/- 1°
Growth Method: Cz
Resistivity: 1-100 Ω-cm
Thickness: 450-550 μm
TTV: <=10 μm
Front Surface: Polished
Back Surface: Polished
Flats: 2 SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 100 +/-0.2 mm
Type/Dopant: N/Phosphorus
Orientation: <100> +/- 1°
Growth Method: Cz
Resistivity: 1-100 Ω-cm
Thickness: 500-550 μm
Front Surface: Polished
Back Surface: Etched
Flats: 2 SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 100 +/- 0.2 mm
Type/Dopant: Customer Specified
Orientation: Customer Specified
Growth Method: Cz
Resistivity: Customer Specified
Thickness: Customer Specified
TTV: Customer Specified
Front Surface: Polished
Back Surface: Customer Specified
Flats: 2 SEMI Standard
Edges: Rounded and polished per SEMI Standard