150 mm (6”) wafers were introduced in 1981. Use of 150 mm wafers has tapered off since 200 mm and now more recently 300 mm wafers were introduced, but there is still a very high demand for 6” wafers. SVM carries many different 150 mm wafer specifications in our multi-million dollar inventory. Here are examples of some of the specifications we carry, please contact SVM for more specific information or if you don’t see a specification that suits your needs.

Diameter: 150 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Thickness: 650-700 μm
TTV: <=10 μm
Bow/Warp: <=40 μm
STIR: <=1 μm
Front Surface: Polished
Particle Count: <=30@>=0.2 μm
Back Surface: Etched
Flat: One SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 150 +/- 0.2 mm
Type/Dopant: N/Phosphorus
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Thickness: 650-700 μm
TTV: <=5 μm
Bow/Warp: <=40 μm
STIR: <=1 μm
Front Surface: Polished
Particle Count: <=30@>=0.2 μm
Back Surface: Etched
Flat: One SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 150 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 10-30 Ω-cm
Thickness: 660-690 μm
TTV: <=3 μm
Bow/Warp: <=40 μm
STIR: <=0.2 μm
Front Surface: Polished
Particle Count: <=20@>=0.2 μm
Back Surface: Etched
Flat: One SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 150 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 10-30 Ω-cm
Oxygen Content: 27-33 ppma
Oxygen Stacking Faults (OSF): <=100/cm2
Carbon Content: <=1.0 ppma
Metals: <5xE10
Thickness: 660-690 μm
TTV: <=10 μm
Bow/Warp: <=40 μm
STIR: <=4 μm
Front Surface: Polished
Particle Count: <=30@>=0.2 μm
Back Surface: Etched
Flat: One SEMI Standard
Edges: Rounded and polished per SEMI Standard