300 mm (12”) wafers were introduced in 1995. Over the last few years, we have seen a tremendous increase in 300 mm usage. Nearly all of the major chip manufacturers have already or have plans to build 300 mm fabs and many equipment manufacturers are busy producing new tools to accommodate 12” wafers. All 300 mm wafers are double-side polished and have a notch identical to the notch found on 200 mm wafers. There are many different grades of 300 mm wafers and SVM is happy to be able to accommodate a very wide variety of customers. Here are a few of the specifications we carry in our multi-million dollar inventory. Please contact SVM for more information.

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Radial Resistivity Gradient (RRG): <=10%
Oxygen Concentration: <=30 ppma
Carbon Concentration: <= 1 ppma
Surface Metals: <=1xE10
Thickness: 750-800 μm
TTV: <=2 μm
GBIR: <=5 μm
STIR: <0.25 μm
Bow/Warp: <= 40 μm
Front Surface: Polished
Particle Count: <=50@>=0.09 μm
Back Surface: Polished

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Radial Resistivity Gradient (RRG): <=10%
Oxygen Concentration: <=30 ppma
Carbon Concentration: <= 1 ppma
Surface Metals: <=1xE10
Thickness: 750-800 μm
TTV: <=2 μm
GBIR: <=5 μm
STIR: <0.25 μm
Bow/Warp: <= 40 μm
Front Surface: Polished
Particle Count: <=50@>=0.12 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-100 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Site Flatness (STIR): <= 0.13 μm
Bow/Warp: <=40 μm Front Surface: Polished
Particle Count: <=30@>=0.2 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-100 Ω-cm
Thickness: 750-800 μm
Front Surface: Polished
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-100 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Front Surface: Polished
Particle Count: <=100@>=0.2 μm
Back Surface: Polished
Notch: SEMI Standard

P+

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 0.005-0.02 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Front Surface: Polished
Particle Count: <=50@>=0.12 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 0.005-0.02 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 0.005-0.02 Ω-cm
Thickness: 750-800 μm
Front Surface: Polished
Particle Count: <=200@>=0.2 μm
Back Surface: Polished
Notch: SEMI Standard