Silicon Wafers and Semiconductor Services

Silicon Wafers and Semiconductor Services

SVM is a leading silicon wafer distributor for US, Europe, and Asia silicon wafer manufacturing company locations worldwide. silicon wafer semiconductor wafers
silicon wafer manufacturer semiconductor wafers manufacturing
WAFERS
GRADE
 
silicon wafer semiconductor wafers
silicon wafer semiconductor wafers
Wafers » Grade » Particle Grade

Particle Grade

Particle grade wafers typically refer to 300 mm wafers and have a minimal amount of contaminants, or particles. Particles are measured at various sizes, 0.09 μm, 0.12 μm, 0.16 μm, 0.20 and 0.30 are common specifications. The number of particles at a certain size is limited to a predetermined number, 10, 20, 50, etc. The specification is written: ≤50@≥0.12 μm. This means there are less than or equal to 50 particles greater than 0.12 μm in size on the entire wafer. Considering one human hair is approximately 1 μm thick, these particles are very small and cannot be seen with the naked eye. The smallest particle that can be seen with the naked eye is 0.5 μm.

Particle Grade wafers are considered to be very clean. Depending on the user’s application, there are a couple of specifications that can be considered particle grade. Here are a couple of particle grade specifications SVM stocks. If you have any questions or are looking for a different particle grade wafer, please contact SVM to speak with a member of our friendly and knowledgeable sales staff.

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Radial Resistivity Gradient (RRG): <=10%
Oxygen Concentration: <=30 ppma
Carbon Concentration: <= 1 ppma
Surface Metals: <=1xE10
Thickness: 750-800 μm
TTV: <=2 μm
GBIR: <=5 μm
STIR: <0.25 μm
Bow/Warp: <= 40 μm
Front Surface: Polished
Particle Count: <=50@>=0.09 μm
Back Surface: Polished

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Radial Resistivity Gradient (RRG): <=10%
Oxygen Concentration: <=30 ppma
Carbon Concentration: <= 1 ppma
Surface Metals: <=1xE10
Thickness: 750-800 μm
TTV: <=2 μm
GBIR: <=5 μm
STIR: <0.25 μm
Bow/Warp: <= 40 μm
Front Surface: Polished
Particle Count: <=50@>=0.12 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1º
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Polished
Notch: SEMI Standard

 

SVM Corporate Profile | Silicon Wafer Manufacturer | Silicon Wafers | Silicon Wafer Services | Silicon Wafers Information