LPCVD Silicon Nitride (SiN)

The higher temperature process results in a higher purity film that is very stable.

Applied to both sides of the wafer.

Offered in 4 types:

1. Stoichiometric LPCVD Nitride:

  • Standard Nitride Film
  • Very Versatile Film
  • Excellent Insulator
  • Excellent Hard Mask
  • Commonly used for MEMS

Stoichiometric Nitride Specifications:

  • Thickness range: 100Å – 7500Å
  • Refractive Index: 2.00 +/-.05
  • Film stress: >800MPa Tensile Stress
  • Wafer Size: 25mm – 300mm
  • Temperature: 700°C – 800°C
  • Sides processed: Both

2. Low Stress LPCVD Nitride:

Common Uses

  • Hard Mask
  • Mechanical Structures
  • Cantilever Beams
  • Membranes
  • MEMS Applications

Low Stress Nitride Specifications

  • Thickness range: 50Å – 2µm
  • Thickness tolerance: +/-5%
  • Within wafer uniformity: +/-5% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: both
  • Refractive index: 2.20 +/-.02
  • Film stress: <250MPa Tensile Stress
  • Wafer size: 50mm-300mm
  • Temperature: 820°C

3. Super Low Stress LPCVD Nitride:

  • Can be deposited thicker than Low Stress Nitride
  • Slightly higher refractive index
  • Same temperature as low stress nitride

Common Uses

  • Hard Mask
  • Mechanical Structures
  • Cantilever Beams
  • Membranes
  • MEMS Applications

Super Low Stress Nitride Specifications:

  • Thickness range: 50Å – 4µm
  • Thickness tolerance: +/-5%
  • Within wafer uniformity: +/-5% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: Both
  • Refractive index: 2.30

4. Targeted Stress LPCVD Nitride:

  • Can be customized to your film stress needs for tensile or compressive film
  • Can be very thick up to 4 µm
  • Can be custom refractive index

Targeted Nitride Specifications:

  • Thickness range: 50Å – 4µm
  • Thickness tolerance: +/-5%
  • Within wafer uniformity: +/-5% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: Both
  • Refractive index: 2.05 – 2.35
  • Film stress: Your target +/-50MPa Tensile Stress
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 800°C – 820°C

PECVD Silicon Nitride (SiN)

  • Lower temperature alternative process
  • Applied to only one side of the wafer
  • Good refractive index
  • Low stress and standard processes available

PECVD Nitride Specifications:

  • Thickness range: 100Å – 2µm
  • Thickness tolerance: +/-7%
  • Within wafer uniformity: +/-7% or better
  • Wafer to wafer uniformity: +/-7% or better
  • Sides processed: One
  • Refractive index: 1.98+/-.05
  • Film stress: <200MPa(Low Stress), +400MPa (Standard)
  • Wafer size: 50mm – 300mm
  • Temperature: 300°C – 400°C

ALD Silicon Nitride

  • Lower temperature alternative process
  • Applied to only one side of the wafer.
  • High quality very conformal film
  • Atomic scale precision

ALD Nitride Specifications:

  • Thickness range: 10Å – 350Å
  • Thickness tolerance: +/-5% or better
  • Within wafer uniformity: +/-5% or better
  • Sides processed: One
  • Wafer size: 200mm – 300mm
  • Temperature: 450°C

PECVD Silicon Oxynitride (SiON)

  • Fewer hydrogen impurities
  • Improved stability
  • Improved device reliability
  • Excellent crack resistance
  • Excellent for planarizing multilevel interconnects
  • These properties mean silicon oxynitride works great as a final passivation layer, intermetal level dielectric and liner for trench isolation

Oxynitride Specifications:

  • Thickness: 100Å – 2μm
  • Refractive index:1.5 – 1.9
  • Film stress: 250MPa
  • Sides processed: One
  • Temperature ~ 400°C
  • Wafer diameter: 50mm – 300mm 

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