Properties of Silicon Carbide:

  • Performs well at high temperatures.
  • Low thermal expansion. SiC can handle temperatures up to 1600°C without losing strength.
  • High resistance to corrosion, erosion and oxidation.
  • Superior hardness properties; diamond is the only harder substance.
  • Fast switching speeds, which improves miniaturization.
  • Great thermal conductivity.

Silicon Carbide Deposition Process:

There are two primary ways to deposit Silicon Carbide: physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD).

Silicon Carbide PVD is performed when powder Silicon Carbide is turned to vapor using one of two methods: either in a high temperature vacuum or with a gaseous plasma. After vaporizing all the material, it moves to a partial or full vacuum furnace containing the wafers. Once in the furnace, the vapor settles on the substrate surface, which results in a thin carborundum layer.

To deposit SiC through PECVD, a CVD furnace exposes the wafers to plasma in order to catalyze the chemical reaction on the substrate surface.